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SCAPS GmbH scaps-1d program
Scaps 1d Program, supplied by SCAPS GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/scaps-1d+program/scaps+1d/pm40653568-274-1-1
Average 90 stars, based on 1 article reviews
scaps-1d program - by Bioz Stars, 2026-10
90/100 stars

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Article Title: An investigation of hole transport layers and electron transport layers to produce highly efficient K 2 TiI 6 -based perovskite solar cells.
Article Snippet: Therefore, this numerical approach was executed by studying the PSCs’ performances using the SCAPS-1D program.

Article Title: An investigation of hole transport layers and electron transport layers to produce highly efficient K 2 TiI 6 -based perovskite solar cells.
Article Snippet: The SCAPS-1D program was used to conduct the numerical analysis where 10 different hole transport layers (HTLs) and 4 electron transport layers (ETLs) were used to find the best optimum device structure.

Article Title: Influence of Gd doping on Cu 2 Sn 1-x Gd x S 3 thin film solar cell
Article Snippet: SCAPS-1D program offers grading of all input parameters such as recombination type, charge type, defect levels (bulk and interfacial), defect level distribution containing Gaussian, single level, uniform, or combinations, contact behaviors (flat band or work function), optical properties (direct excitation of light).

Article Title: An investigation of hole transport layers and electron transport layers to produce highly efficient K 2 TiI 6 -based perovskite solar cells
Article Snippet: The SCAPS-1D program uses two fundamental equations of semiconductors called Poisson equation Eq. ( ) and continuity equation Eqs. ( ) and ( ) to study these effects , .

Article Title: An investigation of hole transport layers and electron transport layers to produce highly efficient K 2 TiI 6 -based perovskite solar cells.
Article Snippet: The SCAPS-1D program uses two fundamental equations of semiconductors called Poisson equation Eq. (1) and continuity equation Eqs. (2) and (3) to study these effects54,55.

Article Title: Influence of Gd doping on Cu 2 Sn 1-x Gd x S 3 thin film solar cell
Article Snippet: In addition, theoretical research suggests that CTS-based photovoltaic devices can achieve an efficiency of 17–20%., Monnaf et al. indicated that the structure of Ni/V 2 O 5 /Cu 2 SnSe 3 /In 2 S 3 /ITO/Al novel heterostructure thin-film solar cell using the SCAPS-1D program suggests the efficiency of up to 32.34% can be gained by the hole transport layer and electron transport layer combination of V 2 O 5 and In 2 S 3 , respectively.

Article Title: Optimizing photovoltaic efficiency in CZTS solar cells by investigating the role of different advanced materials as back surface field layer.
Article Snippet: The SCAPS-1D program was kindly provided by Dr. M. Burgelman of the University of Gent in Belgium.

Article Title: Influence of Gd doping on Cu 2 Sn 1-x Gd x S 3 thin film solar cell
Article Snippet: In this study, Back Contact/ p -Cu 2 Sn 1-x Gd x S 3 / n -CdS/i-ZnO/ITO, the solar cell was modeled based on the CTS-4 absorber layer with the SCAPS-1D program.



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